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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
PA2727UT1A
SWITCHING N-CHANNEL POWER MOSFET
DESCRIPTION
The PA2727UT1A is N-channel MOSFET designed for DC/DC converter applications.
PACKAGE DRAWING (Unit: mm)
1.27
* Low on-state resistance RDS(on)1 = 9.6 m MAX. (VGS = 10 V, ID = 8 A)
0.42 -0.05
+0.1
3 4 6 0.2 5.4 0.2
6 5
RDS(on)2 = 15 m MAX. (VGS = 4.5 V, ID = 8 A) * Low QGD QGD = 3.5 nC TYP. (VDD = 15 V, ID = 16 A) * Thin type surface mount package with heat spreader (8-pin HVSON) * RoHS Compliant
5 0.2 0.27 0.05 1.0 MAX.
2
7
5.15 0.2
FEATURES
1
8
0.10 S
0.10 M 0
+0.05 -0
ABSOLUTE MAXIMUM RATINGS (TA = 25C, All terminals are connected.)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (pulse)
Note1 Note2 Note2
1 0.2
4.1 0.2
VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg
30 20 16 96 1.5 4.6 150 -55 to +150 16 26
V V A A W W C C A mJ
1, 2, 3 : Source 4 : Gate 5, 6, 7, 8: Drain
Total Power Dissipation Channel Temperature Storage Temperature
3.65 0.2 0.6 0.15 0.7 0.15
Total Power Dissipation (PW = 10 sec)
EQUIVALENT CIRCUIT
Drain
Single Avalanche Current Single Avalanche Energy
Note3 Note3
IAS EAS
THERMAL RESISTANCE
Channel to Ambient Thermal Resistance
Note2
Rth(ch-A) Rth(ch-C)
83.3 2.0
C/W C/W
Gate
Body Diode
Channel to Case (Drain) Thermal Resistance Notes 1. PW 10 s, Duty Cycle 1%
Source
2. Mounted on a glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mm 3. Starting Tch = 25C, VDD = 15 V, RG = 25 , VGS = 20 0 V, L = 100 H Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred.
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information.
Document No. G18300EJ1V0DS00 (1st edition) Date Published May 2007 NS CP(K) Printed in Japan
2006, 2007
PA2727UT1A
ELECTRICAL CHARACTERISTICS (TA = 25C, All terminals are connected.)
CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate to Source Cut-off Voltage Forward Transfer Admittance
Note Note
SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2
TEST CONDITIONS VDS = 30 V, VGS = 0 V VGS = 20 V, VDS = 0 V VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 8 A VGS = 10 V, ID = 8 A VGS = 4.5 V, ID = 8 A VDS = 15 V, VGS = 0 V, f = 1 MHz VDD = 15 V, ID = 8 A, VGS = 10 V, RG = 10
MIN.
TYP.
MAX. 10
UNIT
A
nA V S
100
1.5 6 7.6 11 1170 250 90 13 3.6 41 8 9.6 15 2.5
Drain to Source On-state Resistance
m m pF pF pF ns ns ns ns nC nC nC V ns nC
Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Gate Resistance
Note
Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr RG
VDD = 15 V, VGS = 5 V, ID = 16 A IF = 16 A, VGS = 0 V IF = 16 A, VGS = 0 V, di/dt = 100 A/s f = 1 MHz
11 3.8 3.5 0.83 27 23 2.2
Note Pulsed
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T. RG = 25 PG. VGS = 20 0 V 50
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L VDD PG. RG
RL VDD
VGS VGS
Wave Form
0
10%
VGS
90%
VDS
90% 90% 10% 10%
BVDSS IAS ID VDD VDS
VGS 0 = 1 s Duty Cycle 1%
VDS VDS
Wave Form
0
td(on) ton
tr
td(off) toff
tf
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T. IG = 2 mA PG. 50
RL VDD
2
Data Sheet G18300EJ1V0DS
PA2727UT1A
TYPICAL CHARACTERISTICS (TA = 25C)
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA
120
FORWARD BIAS SAFE OPERATING AREA
1000
dT - Percentage of Rated Power - %
100
ID - Drain Current - A
100
ID(pulse)
1i 0
1i 0 0 m
PW
=
30
80 60 40 20 0
0
ID(DC)
m
s
s
i
1i m
i
s
10
1
d it e m Li V ) ) on 1i 0 S( = D R GS (V
Po w
s
i
er D
is si
1i 0
s
pa t io
im Single Pulse it e d Mounted on a glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mm
n
L
0
20
40
60
80
100
120 140 160
0.1 0.01
0.1
1
10
100
TA - Ambient Temperature - C
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
rth(t) - Transient Thermal Resistance - C/W
100
Rth(ch-A) = 83.3C/Wi
10
1
Rth(ch-C) = 2.0C/Wi
0.1 Single Pulse Rth(ch-A): Mounted on a glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mm 0.01 100
1m 10 m 100 m 1 10 100 1000
PW - Pulse Width - s
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
35 30
ID - Drain Current - A
35 10 V 4.5 V 4.0 V 3.8 V 30
ID - Drain Current - A
25 20 15
3.6 V 3.4 V
25 20 15 10 5 VDS = 10 V Pulsed 0 1 2 3 4 5 TA = -55C 25C 75C 125C
3.2 V 10 5 0 0 0.2 0.4 0.6 0.8 1
VDS - Drain to Source Voltage - V
VGS = 3.0 V Pulsed
0
VGS - Gate to Source Voltage - V
Data Sheet G18300EJ1V0DS
3
PA2727UT1A
GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE VGS(off) - Gate to Source Cut-off Voltage - V | yfs | - Forward Transfer Admittance - S
FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT
3 2.5 2 1.5 1 0.5 0 -75 -25 25 75 125 175
Tch - Channel Temperature - C
100 TA = -55C 25C 75C 125C
10
1 VDS = 10 V Pulsed 0.1 0.1 1 10 100
ID - Drain Current - A
VDS = 10 V ID =1 mA
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT RDS(on) - Drain to Source On-state Resistance - m
30
DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE RDS(on) - Drain to Source On-state Resistance - m
30 ID = 8 A Pulsed 20
20
VGS = 4.5 V 10 10 V Pulsed 0 0.1 1 10 100
10
0 0 5 10 15 20
ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE RDS(on) - Drain to Source On-state Resistance - m
VGS - Gate to Source Voltage - V CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
25 20 VGS = 4.5 V 15 10 5 0 -75 -25 25 75 125 175
Tch - Channel Temperature - C Ciss, Coss, Crss - Capacitance - pF
ID = 8 A Pulsed
1000
Ciss
Coss 100 VGS = 0 V f = 1 MHz 10 0.1 1 10 100 Crss
10 V
VDS - Drain to Source Voltage - V
4
Data Sheet G18300EJ1V0DS
PA2727UT1A
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
6
VGS - Gate to Source Voltage - V IF - Diode Forward Current - A
100
4
VDD = 24 V 15 V 6V
10 V VGS = 4.5 V 0V
10
2
1
ID = 16 A 0 0 5 10 15
QG - Gate Charge - nC
Pulsed 0.1 0 0.2 0.4 0.6 0.8 1 1.2
VF(S-D) - Source to Drain Voltage - V
ORDERING INFORMATION
PART NUMBER LEAD PLATING
Note Note Note Note
PACKING
PACKAGE
PA2727UT1A-E1-AZ PA2727UT1A-E2-AZ PA2727UT1A-E1-AY PA2727UT1A-E2-AY
Sn-Bi Tape 3000 p/reel Pure Sn 8-pin HVSON 0.10 g TYP.
Note Pb-free (This product does not contain Pb in the external electrode.)
Data Sheet G18300EJ1V0DS
5
PA2727UT1A
* The information in this document is current as of May, 2007. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document. * NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. * While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC Electronics products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment and anti-failure features. * NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance program" for a specific application. The recommended applications of an NEC Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of each NEC Electronics product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots. "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support). "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above).
M8E 02. 11-1

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